Product Description: This High-Performance N-Channel Power Mosfet Is Designed For Demanding Applications Requiring Low On-Resistance And Fast Switching. Ideal For Power Electronics Enthusiasts And Professionals Alike. Key Features: Ultra Low On-Resistance: 2.0Mo Maximum Drain Current: 75A High Breakdown Voltage: 40V Operating Temperature Range: -55C To +175C Fast Switching: Turn-On Delay Time (Td(On)) Typically 13Ns Rise Time (Tr) Typically 120Ns Repetitive Avalanche Energy: Ensures Reliable Operation Under Harsh Conditions Thermal Resistance: Junction-To-Case (R?Jc) Typically 0.50C/W Lead-Free And Rohs Compliant For Environmentally Friendly Operation Absolute Maximum Ratings: Gate-To-Source Voltage: 20V Storage Temperature: -55C To +175C Maximum Power Dissipation: 95332B (Note: Consult Datasheet For Detailed Conditions) Package Options: D2Pak To-220Ab To-262 Static Characteristics: Drain-To-Source On-Resistance (Rds(On)): Typically 2.0Mo Gate Threshold Voltage (Vgs(Th)): Typically 3.0V Forward Transconductance (Gfs): Typically 130 S Diode Characteristics: Body Diode Forward Voltage (Vsd): Typically 1.3V Reverse Recovery Time (Trr): Typically 84Ns Capacitance Values: Input Capacitance (Ciss): Typically 6450Pf Output Capacitance (Coss): Typically 1690Pf Environmental: Storage Temperature: -55C To +175C Soldering Temperature: Max 300C For 10 Seconds Mounting And Thermal Considerations: Mounting Torque: Max 10 Lbfin (1.1Nm)
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